The first time GaN changed optoelectronics occurred at the light source end. GaN based LED technology has greatly replaced traditional inefficient lighting and display technologies in fields such as lighting and display screensty le keo bd, achieving huge energy-saving and emission reduction benefits. Taking light bulbs as an example, LED light efficiency has been improved by about 7.5 times, and its lifespan has been extended by 30 times. More and more lighting manufacturers are adopting GaN devices at the LED driver (LED power supply) end to carry out a new round of innovative upgrades for LED lamps. Due to GaN; The gate charge (Qg) of the SI device is 1/12& nbsp; When switching at higher switching frequencies& nbsp; GaN technology can reduce driving losses by 90%& nbsp; Furthermore, due to the absence of a body diode& nbsp; GaN devices have no reverse recovery losses and can achieve better EMI performance, which means that GaN technology does not require too complex EMI circuits, thereby saving costs and additional losses.

As a large "power bank"kèo hôm nay, mobile energy storage products are very popular, usually consisting of two circuits: charging and discharging. There are two charging methods: mains power and solar power. mains power charging consists of PFC and isolated DC-DC; Solar charging consists of photovoltaic panels and MPPT; It can provide two discharge functions: AC output and DC output. The AC output consists of isolated DC-DC and inverter; DC output is usually composed of non isolated DC-DC. GaN devices can be applied in multiple aspects, enabling bidirectional inverter functionality for mobile energy storage products. This not only improves system efficiency but also provides high energy conversion rates, enabling fanless design. In addition, it can reduce device size and weight, making energy storage products more lightweight.

Taking mobile phone fast charging as an examplety le keo bd, today's phones are becoming increasingly powerful, which requires adapters for charging phones to develop towards higher power and higher power density. GaN's high-frequency and high-efficiency characteristics perfectly meet this requirement. Compared to traditional Si  Compared to MOSFETs, GaN has the following advantages:
1. Low QG/Cissty le keo bd, low Coss/; qss： Fast switching speed, reducing switching losses;
2 、Qrr=0：No reverse recovery loss (without body diode)ty le keo bd, reduces switch noise, and improves EMI performance；
3link w88, RDSON thấp: Giảm tổn thất dẫn điện.
Gallium nitride's high efficiencylink w88, low loss, and high-frequency characteristics make it shine in the charger industry. Compared to regular chargers, Under the same powerkèo hôm nay, the volume of the gallium nitride adapter is smaller, and one gallium nitride charger can meet the charging needs of multiple electronic products, greatly improving the convenience of use。